Full wafer surface images are captured in one shot using dark-field and bright-field illumination. These images are processed in near real-time to extract a broad range of defects. The SPARK system is sensitive to large area defects down to small defects beyond the sensitivity of traditional macro inspection systems. Additionally, CD uniformity information can be extracted on product wafers.

• Single shot image capture in less than 5 s/wafer
• Simultaneous broadband bright-field and dark-field illumination to enable capture of surface and embedded defects
• >1-3 µm defect capture on patterned wafers at >120 wph
• >0.5 µm defect capture on unpatterned wafers at >120 wph
• Full wafer inspection, partial die, edge exclusion zone, EBR measurement
• Easy set-up including waferless recipe creation to reduce time to production
• Consistent matching results from tool to tool
• Optional backside inspection
• No moving parts during measurement
• High reliability and low CoO